data sheet no. pd10025e series pvd33 microelectronic power ic
single-pole, 220ma, 0-300v dc general description the photovoltaic dc relay (pvd) is a single-pole, normally open solid state replacement for electro- mechanical relays used for general purpose switch- ing of analog signals. it utilizes as an output switch a unique bidirectional (ac or dc) mosfet power ic termed a bosfet. the bosfet is controlled by a photovoltaic generator of novel construction, which is energized by radiation from a dielectrically iso- lated light emitting diode (led). the pvd overcomes the limitations of both conven- tional and reed electromechanical relays by offering the solid state advantages of long life, high operat- ing speed, low pick-up power, bounce-free opera- tion, low thermal voltages and miniaturization. these advantages allow product improvement and design innovations in many applications such as process control, multiplexing, telecommunications, automatic test equipment and data acquisition. the pvd can switch analog signals from thermo- couple level to 300 volts peak dc. signal frequen- cies into the rf range are easily controlled and switching rates up to 6khz are achievable. the ex- tremely small thermally generated offset voltages allow increased measurement accuracies. unique silicon technology developed by international rectifier forms the heart of the pvd. the monolithic bosfet contains a bidirectional n-channel power mosfet output structure. in addition, this power ic chip has input circuitry for fast turn-off and gate pro- tection functions. this section of the bosfet chip utilizes both bipolar and mos technology to form npn transistors, p-channel mosfets, resistors, di- odes and capacitors. the photovoltaic generator similarly utilizes a unique international rectifier alloyed multijunction structure. the excellent current conversion efficiency of this technique results in the very fast response of the pvd microelectronic power ic relay. this advanced semiconductor technology has cre- ated a radically new control device. designers can now develop switching systems to new standards of electrical performance and mechanical compactness. features bosfet power ic 10 10 operations 100sec operating time 3 milliwatts pick-up power 1000v/sec dv/dt bounce-free 8-pin dip package -40c to 85c ul recognized part identification part number operating sensitivity off-state voltage (dc) resistance pvd2352 200v 10 8 ohms 5 ma PVD3354 300v 10 10 ohms
replaced by pvd33n
2 replaced by pvd33n input characteristics pvd2352 PVD3354 units minimum control current (see figures 1 and 2) dc for 160ma continuous load current 2.0 ma@25c for 200ma continuous load current 5.0 ma@40c for 90ma continuous load current 5.0 ma@85c maximum control current for off-state resistance at 25c 10 a(dc) control current range (caution: current limit input led. see figure 6) 2.0 to 25 ma(dc) maximum reverse voltage 7.0 v(dc) electrical specifications (-40 c t a +85 c unless otherwise specified ) general characteristics (pvd2352 and PVD3354) units dielectric strength: input-output 2500 v rms insulation resistance: input-output @ 90v dc 10 12 @ 25c - 50% rh ? maximum capacitance: input-output 1.0 pf max. pin soldering temperature (1.6mm below seating plane, 10 seconds max.) +260 ambient temperature range: operating -40 to +85 c storage -40 to +100 output characteristics pvd2352 PVD3354 units operating voltage range 200 300 v (peak) maxiumum load current 40c (see figures 1and 2) 220 ma (dc) response time @25c (see figures 7 and 8) max. t (on) @ 12ma control, 50 ma load, 100 vdc 100 s max. t (off) @ 12ma control, 50 ma load, 100 vdc 50 s max. on-state resistance 25c (pulsed) (fig. 4) 50 ma load, 5ma control 6 ? min. off-state resistance 25c (see figure 5) 10 8 @ 160vdc 10 10 @ 240vdc ? max. thermal offset voltage @ 5.0ma control 0.2 volts min. off-state dv/dt 1000 v/s output capacitance (see figure 9) 20 pf @ 50vdc
3 replaced by pvd33n max. load current (ma) figure 1. current derating curves figure 2. typical control current requirements figure 3.typical on characteristics figure 4. typical on-resistance r ds(on) ( ? ) i led (ma) max. load current (ma) ambient temperature (c) v ds (volts) load current (ma) ambient temperature (c)
4 replaced by pvd33n i d off/i d off 25c figure 5. normalized off-state leakage figure 6. input characteristics (current controlled) figure 7.typical delay times figure 8. delay time definitions led forward voltage drop (volts dc) input current (ma) ambient temperature (c) i led (ma) delay time (microseconds)
5 replaced by pvd33n typical capacitance (picofarads) wiring diagram figure 9. typical output capacitance v ds drain to source voltage
6 replaced by pvd33n case outline
mechanical specifications: package: 8-pin dip tolerances: .015 (.38) unless otherwise specified case material: molded epoxy weight: .07 oz. (2 gr.) world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 http://www.irf.com/ data and specifications subject to change without notice. 12/6/2000
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